中心博士周佩奇、王博等最新关于硅基掺铒-Ⅲ-V半导体混合集成光源的文章 “Design on an on-chip electrically driven, position-adapted, fully integrated erbium-based waveguide amplifier for silicon photonics” 近期发表在OSA Continuum期刊上。在这项研究中，提出了一种新型的片上的、电驱动的、高灵活性的全集成的硅基波导放大器。该器件将III-V 族量子阱(MQW)垂直腔发射泵浦激光器通过键合技术混合集成在掺铒混合波导放大器上。并针对器件结构对垂直泵浦谐振腔，MQW有源层和放大器波导结构进行了建模与分析。 在室温45 mA的注入电流下，器件的最大饱和增益约为42.5 dB/cm，并可以实现约42 GHz的调制带宽。结果表明，所提出的高增益掺铒波导放大器具有满足片上放大要求的潜力，这种硅基掺铒-Ⅲ-V半导体混合集成光源结构为未来电泵浦的掺铒波导器件提供了一种新的技术方案。

摘要：Erbium-doped waveguide amplifiers are important for silicon photonic large-scale integration. They boost the optical signal to compensate for the on-chip loss of the whole system, such as insertion, transmission, and coupling loss. Herein, a GaAs-on-silicon-pumped erbium-based waveguide amplifier is proposed. The optical amplifier is based on waveguides evanescently coupled with an erbium-doped thin-film gain medium. The erbium-doped gain region is locally pumped by a hybrid GaAs-SiN/SiO vertical-cavity-emitting pump laser. It can be selectively fabricated on the silicon photonic chip that has good position flexibility when integrated with other devices. The amplifier provides high-quality electrically driven amplification and realizes the full integration of amplifiers with the silicon photonic system without any external pump light source. The modeling analyses show that the proposed amplifier design has a maximum saturated gain of 42.5 dB/cm with a modulation bandwidth of ~42 GHz. This high-gain, large-bandwidth device fully utilizes the advantages of erbium-doped materials and silicon-based III-V semiconductors, while overcoming their issues, and opens up a new pathway for on-chip amplification.

论文链接：

https://doi.org/10.1364/OSAC.413492