Recently, the results of the 2025 Top Ten Semiconductor Research Advances, organized by Journal of Semiconductors, were officially announced. The Center’s work, “Ultra-Broadband Thin-Film Lithium Niobate Optoelectronic Integrated Chip,” has been selected as one of the 2025 Top Ten Semiconductor Research Advances.

In this work, the Center’s team successfully addressed key process challenges in simultaneously achieving compatibility with large-scale wafer-level manufacturing and ultra-wide electro-optic modulation bandwidth. Based on a thin-film lithium niobate (TFLN) integrated photonics platform, the team realized an ultra-broadband TFLN optoelectronic integrated chip. For the first time, the chip enables generation, modulation, transmission, and reception of wireless signals at arbitrary frequencies across an ultra-wide band from 0.5 GHz to 115 GHz, achieving a maximum wireless data rate of 120 Gbps. This advance provides a critical technological foundation for more robust and reliable future 6G wireless communications.

A total of 81 high-quality candidate achievements were nominated in this year’s selection, spanning multiple research areas including traditional semiconductors, emerging materials, and integrated circuits, showcasing major breakthroughs by China’s semiconductor research community. 460 experts and scholars participated in the evaluation, comprehensively assessing the candidates from perspectives such as academic originality, technological frontier, and industrial impact. Ultimately, 10 outstanding achievements were selected as the 2025 Top Ten Semiconductor Research Advances.

Award List Link:
https://mp.weixin.qq.com/s/BNcrORgEBEdU2jS1jxG7FA